Integrated circuit with electrostatic discharge (ESD) resistant capacitor located in N-trough, with certain polarity of capacitor permitting formation depletion zone in trough and high ESD strength of capacitor

摘要

Integrated circuit (10) contains reference operational potential line (18), under basic potential in specified strength. Between both potential lines is fitted capacitor (12) with specified zones. Specified zones include main doping region (20), coupling region (22,24) with main type doping and electrode region (30) spaced from main doping region. Between electrode and main doping regions is deposited dielectric (28). Further details are specified. An independent claim is also included for method of manufacturing integrated circuits with capacitors.