CHARGE STORAGE MEMORY AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To attain a memory cell miniaturization and the protraction of a data retention time duration. SOLUTION: A constitution is formed in which a bottom barrier layer 4, a first charge storage layer 5, a second charge storage layer 6, a top barrier layer 7, and a gate electrode 8 are sequentially laminated on a semiconductor substrate 1. The density of the localized level of the second charge storage layer 6 is made higher than that of the localized level of the first charge storage layer 5. COPYRIGHT: (C)2005,JPO&NCIPI