| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the characteristic of the device having a CN and an electrode has been not favorable due to the faultiness of both joined to each other. SOLUTION: In the course of the process of creating a CN-FET (before the depositing process for forming a source electrode 23a and a drain electrode 23b), a photoresist 11 having openings 11a, 11b in the predetermined forming regions of the source/drain electrodes is so formed as to perform an oxygen (O<SB>2</SB>) plasma processing during about 5-25 minutes by using it as a mask. In the openings 11a, 11b of the photoresist 11, there are exposed to the external catalysts 7 and both the ends and the vicinities thereof whereat a carbon nano-tube 15 is contacted with the catalysts 7 as to perform in this state another oxygen (O<SB>2</SB>) plasma processing during 5-15 minutes. Consequently, there are formed processed regions 15a, 15b of the carbon nano-tube 15 which are subjected to the oxygen (O<SB>2</SB>) plasma processing. After removing the photoresist 11, Ti/Au electrodes are so formed in the opening regions as to obtain a source electrode (21a/23a) and a drain electrode (21b/23b). In this state, the Tis of the source electrode (21a/23a)/the drain electrode (21b/23b) are brought respectively into the contacting states with the processed regions 15a, 15b. COPYRIGHT: (C)2005,JPO&NCIPI |
