| 摘要 |
PROBLEM TO BE SOLVED: To provide an SBD element, capable of obtaining better rectification efficiency than an SBD element equipped with a guard ring layer and having overvoltage and ESD protective functions. SOLUTION: A semiconductor integrated circuit device includes the SBD element, having a cathode region consisting of the first semiconductor region of a first conductivity type provided on the principal plane of a semiconductor substrate, an anode region Schottky-jointed with the cathode region and consisting of a conductive layer with its plane formed into a rectangular shape, and the second semiconductor region of a second conductivity-type pn-jointed with the first semiconductor region and also electrically connected with the conductive layer. The second semiconductor region is provided only on two opposite sides of the anode region. COPYRIGHT: (C)2005,JPO&NCIPI |
