| 摘要 |
A semiconductor device comprises a first-conductivity-type semiconductor substrate, a first-conductivity-type first semiconductor layer formed on the semiconductor substrate, a second semiconductor layer formed on the first semiconductor layer and has a first-conductivity-type impurity concentration higher than that of the first semiconductor layer, a second-conductivity-type first semiconductor region selectively formed on an upper surface of the first semiconductor layer at a boundary with the second semiconductor layer, a source electrode selectively formed on the second semiconductor layer and achieves ohmic contact with the second semiconductor layer and the first semiconductor region, a gate electrode selectively formed on the second semiconductor layer and achieves Schottky contact with the second semiconductor layer, and a drain electrode formed on a lower surface of the semiconductor substrate and achieves ohmic contact with the semiconductor substrate.
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