DRAM storage cell, formed by producing trench capacitors in a semiconductor substrate, and applying a mask to enable gate sections to be formed

摘要

Producing a DRAM storage cell (2) unit, with a trench capacitor (3) and a FET, comprises forming trench capacitors in a semiconductor substrate (1), in rows (63). Neighbouring rows are displaced with respect to each other, and insulating structures (61') are arranged between them. A mask is applied to enable gate sections to be formed in the gate insulation structures. The primary mask material is poly silicon, while the secondary mask material consists of undoped poly silicon.