GROUP I-VII SEMICONDUCTOR SINGLE CRYSTAL THIN FILM AND PROCESS FOR PRODUCING SAME

摘要

A CaF2 buffer layer (3) is formed on a CaF2 (111) substrate (2) by an MBE method. Furthermore, a CuCl thin film is grown on the CaF2 buffer layer (3) by an MBE method while irradiating it with an electron beam to form an electron beam irradiation film (1a). Subsequently, a CuCl thin film is grown by an MB E method under a state where irradiation of electron beam is interrupted to fo rm an electron beam non-irradiation film (1b), thereby thus forming a CuCl thin film (1) consisting of the electron beam irradiation film (1a) and the electron beam non-irradiation film (1b). Consequently, a CuCl thin film (1) exhibiting high planarity and crystallinity can be formed.