| 摘要 |
PROBLEM TO BE SOLVED: To realize high-density wiring by previously removing a conductive layer for electrolytic plating of a part except the pattern formed by electrolytic plating before electrolytic plating, when high-density wiring is formed by electrolytic plating on a substrate, such as a silicon wafer, etc. SOLUTION: In the high-density wiring substrate (1), a high-density wiring layer (80) is formed by electrolytic plating on the retention conductive layer (31) by using the substrate (60), in which the conductive layer (30) of the region, which does not form high-density wiring of the conductive layer (30) formed on the substrate (10) via an adhesion layer (20), is removed beforehand. COPYRIGHT: (C)2005,JPO&NCIPI
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