| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for vapor deposition, which can form a deposited film having a uniform thickness and a high purity, e.g. an amorphous organic compound film or a multicomponent-codeposited film having a smooth surface, and keep a utilization efficiency of an evaporation material and a film-forming rate high by minimizing deposition of a depositing substance in a vacuum chamber, and an apparatus therefor. SOLUTION: A substrate 3 and an evaporation source 5 are placed so as to face each other in the vacuum chamber 1. Around the evaporation source 5, an introductory part 11 for a gas 15 is disposed to form a gas flow 10 which flows from the circumference of the evaporation source 5 toward the substrate 3. The gas flow 10 controls the scattering direction 9 of vapor molecules of the depositing substance emitted from the evaporation source 5 toward the substrate 3. A peripheral wall of a vessel 5b containing the depositing substance 5a is formed in a protruding manner, and the temperature of the protruding part 18 of the peripheral wall is controlled to a temperature preventing deposition of the depositing substance 5a, so that the protruding part 18 functions as a barrier or a guide for leading the vapor molecules toward the substrate 3. COPYRIGHT: (C)2005,JPO&NCIPI
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