发明名称 |
Semiconductor device gate structure and method of forming the same |
摘要 |
A MOS transistor includes a gate structure extending forrom a semiconductor substrate in a vertical direction is disclosed. The gate structure includes a gate electrode extending from the substrate in a vertical direction, and a gate insulation layer enclosing the gate electrode. A channel pattern encloses the gate insulation layer, and a first conductive pattern extends from a lower portion of the channel pattern in a first direction verticalperpendicular to the channel pattern and in parallel with the substrate. A second conductive pattern extends from an upper portion of the channel pattern in a second direction verticalperpendicular to the channel pattern and in parallel with the substrate. Accordingly, the channel length of the MOS transistor is determined by a distance between the first and second conductive patterns, and a channel width of the MOS transistor is determined by a diameter of the gate structure. Short channel and narrow width effects are sufficiently prevented in a MOS transistor.
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申请公布号 |
US2005184348(A1) |
申请公布日期 |
2005.08.25 |
申请号 |
US20050059145 |
申请日期 |
2005.02.15 |
申请人 |
YOUN JAE-MAN;PARK DONG-GUN;LEE CHOONG-HO;YOSHIDA MAKOTO;LEE CHUL |
发明人 |
YOUN JAE-MAN;PARK DONG-GUN;LEE CHOONG-HO;YOSHIDA MAKOTO;LEE CHUL |
分类号 |
H01L21/28;H01L21/316;H01L21/336;H01L21/8234;H01L21/84;H01L27/12;H01L29/423;H01L29/49;H01L29/78;H01L29/786;(IPC1-7):H01L27/12 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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