A semiconductor device and method of manufacture provide an n-channel field effect transistor (nFET) having a shallow trench isolation with overhangs that overhang Si-SiO2 interfaces in a direction parallel to the direction of current flow and in a direction transverse to current flow. The device and method also provide a p-channel field effect transistor (pFET) having a shallow trench isolation with an overhang that overhangs Si-SiO2 interfaces in a direction transverse to current flow. However, the shallow trench isolation for the pFET is devoid of overhangs, in the direction parallel to the direction of current flow.
申请公布号
WO2005038875(A3)
申请公布日期
2005.08.25
申请号
WO2004US34047
申请日期
2004.10.15
申请人
INTERNATIONAL BUSINESS MACHINES CORP.;DORIS, BRUCE, B.;GLUSCHENKOV, OLEG, G.