<p>Disclosed is a method for producing a silicon oxide film having better quality than a TEOS at low temperatures. Also disclosed is a method for manufacturing a semiconductor device wherein an insulating film composed of a silicon oxide is formed. Specifically, an insulating film composed of a silicon oxide is deposited by a CVD method wherein a silane compound represented by the general formula below is reacted. HnSi2(OR)6-n (In the above formula, R represents an alkyl group having 1-5 carbon atoms and n represents an integer of 0-2.)</p>
