发明名称 |
Semiconductor device manufacturing method |
摘要 |
The present invention relates to a semiconductor device manufacturing method for forming a via hole or a contact hole in an interlayer insulating film with a low dielectric constant. The method comprises the steps of forming an underlying insulating film 2 formed of a nitrogen containing insulating film on a substrate 1, forming a porous insulating film 3 on the underlying insulating film 2, forming an opening portion 7a in the underlying insulating film 2 and the porous insulating film 3, and forming a nitrogen containing insulating film 4, 4a on a surface of the porous insulating film 3 and an inner surface of the opening portion 7a by bringing the surface of the porous insulating film 3 and the inner surface of the opening portion 7a into contact with any one gas plasma of an ammonia gas, a nitrogen gas, and an oxygen nitride gas. |
申请公布号 |
EP1566837(A2) |
申请公布日期 |
2005.08.24 |
申请号 |
EP20050011683 |
申请日期 |
2000.04.13 |
申请人 |
CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD. |
发明人 |
SUZUKI, TOMOMI;IKAKURA, HIROSHI;OHIRA, KOICHI;MAEDA, KAZUO;SHIOYA, YOSHIMI |
分类号 |
H01L23/522;H01L21/28;H01L21/3105;H01L21/311;H01L21/312;H01L21/314;H01L21/316;H01L21/318;H01L21/768 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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