发明名称 |
RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN FORMING METHOD USING THE SAME |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a resist composition for liquid immersion exposure improved in mask shape reproducibility, pattern falling and exposure latitude and excellent in property of following an immersion liquid when applied to liquid immersion exposure, and to provide a pattern forming method using the same. <P>SOLUTION: The resist composition for liquid immersion exposure comprises (A) a resin whose solubility to an alkaline developer is increased by the action of an acid, (B) an acid generator by light, and (C) a mixed solvent containing at least one selected from the groupαof solvents (alkylene glycol monoalkyl ether carboxylates) and at least one selected from the groupβof solvents (cyclic alkyl ketones and linear alkyl ketones). <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
申请公布号 |
KR20050083026(A) |
申请公布日期 |
2005.08.24 |
申请号 |
KR20050006540 |
申请日期 |
2005.01.25 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
TAKAHASHI HYOU;KANNA SHINICHI;INABE HIROKI;KANDA HIROMI |
分类号 |
G03F7/004;G03F7/027;G03F7/039;G03F7/20;H01L21/027;(IPC1-7):G03F7/027 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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