发明名称 |
SOLID-STATE IMAGING DEVICE AND RADIATION IMAGING SYSTEM |
摘要 |
<p>N<+>-type semiconductor regions 12d are formed on a front surface side of a p<->-type layer 12c of a semiconductor substrate 12, and these n<+>-type semiconductor and p<->-type semiconductor constitute photodiodes. A metal wire 14 connected to an isolation region 12e is formed on a first insulating layer 13. The metal wire 14 is provided so as to extend along a row direction and along a column direction between adjacent n<+>-type semiconductor regions 12d, and is of grid shape when viewed from a direction of incidence of light. Signal readout lines 53 are formed on a third insulating layer 16. The signal readout lines 53 are made of metal such as aluminum, are located above the n<+>-type semiconductor regions 12d when viewed from the direction of incidence of light, and are provided so as to extend along the column direction. <IMAGE></p> |
申请公布号 |
EP1566840(A1) |
申请公布日期 |
2005.08.24 |
申请号 |
EP20030811935 |
申请日期 |
2003.11.26 |
申请人 |
HAMAMATSU PHOTONICS K. K. |
发明人 |
MORI, HARUMICHI,;FUJITA, KAZUKI,;KYUSHIMA, RYUJI,;HONDA, MASAHIKO, |
分类号 |
G01T1/24;H01L27/14;H01L27/146;H01L31/09;H04N5/32;H04N5/335;H04N5/357;H04N5/369;H04N5/374;(IPC1-7):H01L27/146 |
主分类号 |
G01T1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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