发明名称 |
COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE |
摘要 |
A composition for film formation from which a porous film of practical mechanical strength can be prepared through simple processing at low cost; a porous film and a process for producing the same; and a highly reliable semiconductor device of low cost and high performance wherein the porous film is incorporated. In particular, a composition for porous film formation, comprising a polymer obtained by hydrolytic condensation of at least one silane compound of the general formula: (R<1>)a Si (R<2>)4-a (1), preferably a polymer obtained by co-hydrolytic condensation of at least one silane compound of the general formula (1) and at least one silane compound of the general formula: (R<3>)b Si (R<4>)4-b (2). Further, there is provided a process for producing the porous film, comprising the steps of coating with the above film formation composition and forming pores.
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申请公布号 |
EP1566417(A1) |
申请公布日期 |
2005.08.24 |
申请号 |
EP20030811130 |
申请日期 |
2003.11.13 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
IWABUCHI, M.;YAGIHASHI, F.;HAMADA, Y.;NAKAGAWA, HIDEO;SASAGO, MASARU |
分类号 |
C08L83/04;C09D183/04;C08G77/04;C08G77/38;C08K5/23;H01L21/312;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):C09D183/04 |
主分类号 |
C08L83/04 |
代理机构 |
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代理人 |
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地址 |
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