发明名称 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE
摘要 A composition for film formation from which a porous film of practical mechanical strength can be prepared through simple processing at low cost; a porous film and a process for producing the same; and a highly reliable semiconductor device of low cost and high performance wherein the porous film is incorporated. In particular, a composition for porous film formation, comprising a polymer obtained by hydrolytic condensation of at least one silane compound of the general formula: (R<1>)a Si (R<2>)4-a (1), preferably a polymer obtained by co-hydrolytic condensation of at least one silane compound of the general formula (1) and at least one silane compound of the general formula: (R<3>)b Si (R<4>)4-b (2). Further, there is provided a process for producing the porous film, comprising the steps of coating with the above film formation composition and forming pores.
申请公布号 EP1566417(A1) 申请公布日期 2005.08.24
申请号 EP20030811130 申请日期 2003.11.13
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 IWABUCHI, M.;YAGIHASHI, F.;HAMADA, Y.;NAKAGAWA, HIDEO;SASAGO, MASARU
分类号 C08L83/04;C09D183/04;C08G77/04;C08G77/38;C08K5/23;H01L21/312;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):C09D183/04 主分类号 C08L83/04
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