发明名称 |
Semiconductor device and method for manufacturing it |
摘要 |
<p>A semiconductor device includes: an insulating film; a metal thin-film resistance element; a wiring pattern formed on the insulating film, a part of which forms an electrode for electrically connecting with the metal thin-film resistance element; and a side wall produced at least on a side surface of the electrode of the wiring pattern, and made of an insulation material, wherein: the metal thin-film resistance element is produced across a top surface of the electrode and a surface of the insulating film via a surface of the side wall.</p> |
申请公布号 |
EP1566831(A2) |
申请公布日期 |
2005.08.24 |
申请号 |
EP20050250899 |
申请日期 |
2005.02.17 |
申请人 |
RICOH COMPANY, LTD. |
发明人 |
HASHIMOTO, YASUNORI;YAMASHITA, KIMIHIKO |
分类号 |
H01L21/02;H01L21/3205;H01L21/822;H01L23/52;H01L23/522;H01L23/525;H01L27/01;H01L27/04;H01L27/08;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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