发明名称 Semiconductor device and method for manufacturing it
摘要 <p>A semiconductor device includes: an insulating film; a metal thin-film resistance element; a wiring pattern formed on the insulating film, a part of which forms an electrode for electrically connecting with the metal thin-film resistance element; and a side wall produced at least on a side surface of the electrode of the wiring pattern, and made of an insulation material, wherein: the metal thin-film resistance element is produced across a top surface of the electrode and a surface of the insulating film via a surface of the side wall.</p>
申请公布号 EP1566831(A2) 申请公布日期 2005.08.24
申请号 EP20050250899 申请日期 2005.02.17
申请人 RICOH COMPANY, LTD. 发明人 HASHIMOTO, YASUNORI;YAMASHITA, KIMIHIKO
分类号 H01L21/02;H01L21/3205;H01L21/822;H01L23/52;H01L23/522;H01L23/525;H01L27/01;H01L27/04;H01L27/08;(IPC1-7):H01L21/02 主分类号 H01L21/02
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