发明名称 |
Process for producing a large volume CaF2 single crystal with a low scattering and improved laser stability, as well as such a crystal and its application |
摘要 |
<p>Process for preparation of a CaF 2single crystal of small scattering (sic), refractive index difference and number of small angle grain boundaries involving growth of the crystal from a CaF 2material melt by cooling the melt followed by tempering, where the CaF 2crystal raw material is vaporized at no less than 1,100[deg]C under a maximum vacuum of 5.10 -4>and condensed at 500-1,280[deg]C to give a CaF 2melt which is converted to the gas phase for at least 5 hours and at 1,000-1,250[deg]C.</p> |
申请公布号 |
EP1566469(A2) |
申请公布日期 |
2005.08.24 |
申请号 |
EP20050003902 |
申请日期 |
2005.02.23 |
申请人 |
SCHOTT AG |
发明人 |
ORTMANN, LARS, DR.;KANDLER, JOERG, DR.;MENZEL, ANDREAS;MUELLER, MATTHIAS, DR.;PARTHIER, LUTZ DR.;VON DER GOENNA,GORDON DR. |
分类号 |
C30B29/12;G03F1/14;C01B9/08;C01F11/22;C30B11/00;G02B1/02;G02B5/30;G03F7/20;H01L21/027;(IPC1-7):C30B29/12 |
主分类号 |
C30B29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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