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发明名称
LOW DEFECT GAAS SINGLE CRYSTAL GROWTH BY VB METHOD
摘要
申请公布号
KR20050082676(A)
申请公布日期
2005.08.24
申请号
KR20040011205
申请日期
2004.02.20
申请人
NEOSEMITECH INC.
发明人
OH, MYUNG HWAN
分类号
C30B29/42;(IPC1-7):C30B29/42
主分类号
C30B29/42
代理机构
代理人
主权项
地址
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