DRAIN/SOURCE EXTENSION STRUCTURE OF A FIELD EFFECT TRANSISTOR INCLUDING DOPED HIGH-K SIDEWALL SPACERS AND MANUFACTURING METHOD,申请号EP20030786592-传众专利搜索

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发明名称	DRAIN/SOURCE EXTENSION STRUCTURE OF A FIELD EFFECT TRANSISTOR INCLUDING DOPED HIGH-K SIDEWALL SPACERS AND MANUFACTURING METHOD
摘要
申请公布号	EP1565934(A1)	申请公布日期	2005.08.24
申请号	EP20030786592	申请日期	2003.11.06
申请人	ADVANCED MICRO DEVICES, INC.	发明人	FEUDEL, THOMAS;HORSTMANN, MANFRED;WIECZOREK, KARSTEN;KRUEGEL, STEPHAN
分类号	H01L21/225;H01L21/336;H01L29/78;(IPC1-7):H01L21/336	主分类号	H01L21/225
代理机构		代理人
主权项
地址

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