发明名称 SENSITIVE ENHANCED BIOMOLECULE FIELD EFFECT TRANSISTOR
摘要 There is provided a biomolecule eg DNA FET with enhanced sensitivity. The biomolecule FET includes a substrate (21), first and second impurity regions (22a,22b) formed on both sides of the substrate, and doped with impurities of a polarity opposite to that of the substrate, a gate (23) formed on the substrate and being in contact with the first and second impurity regions, and a probe biomolecule (18) attached to the gate. An annular channel region underneath the gate (23) surrounds the circular drain region (22b), and is in turn surrounded by the source region (22a). The density of the probe biomolecule attached to the surface of the gate is increased, and when detecting the level of hybridization of the probe biomolecule and the target biomolecule, its sensitivity is improved. <IMAGE>
申请公布号 KR20050082758(A) 申请公布日期 2005.08.24
申请号 KR20040011321 申请日期 2004.02.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOO, KYU TAE;LIM, GEUN BAE;KIM, JOON HO;NAMKOONG, KAK
分类号 C12Q1/68;G01N27/414;G01N33/487;(IPC1-7):G01N27/327 主分类号 C12Q1/68
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