发明名称 |
Laser-produced plasma EUV light source with isolated plasma |
摘要 |
An EUV radiation source ( 40 ) that includes a nozzle ( 42 ) positioned a far enough distance away from a target region ( 50 ) so that EUV radiation ( 56 ) generated at the target region ( 50 ) by a laser beam ( 54 ) impinging a target stream ( 46 ) emitted from the nozzle ( 42 ) is not significantly absorbed by target vapor proximate the nozzle ( 42 ). Also, the EUV radiation ( 56 ) does not significantly erode the nozzle ( 42 ) and contaminate source optics ( 34 ). In one embodiment, the nozzle ( 42 ) is more than 10 cm away from the target region ( 50 ).
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申请公布号 |
US6933515(B2) |
申请公布日期 |
2005.08.23 |
申请号 |
US20030606447 |
申请日期 |
2003.06.26 |
申请人 |
UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION |
发明人 |
HARTLOVE JEFFREY S.;MICHAELIAN MARK E.;SHIELDS HENRY;FORNACA STEVEN W.;MCNAUGHT STUART J.;MARTOS FERNANDO;MOYER RICHARD H. |
分类号 |
G21K5/08;H01L21/027;H05G2/00;H05H1/24;(IPC1-7):H01J35/00 |
主分类号 |
G21K5/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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