发明名称 Laser-produced plasma EUV light source with isolated plasma
摘要 An EUV radiation source ( 40 ) that includes a nozzle ( 42 ) positioned a far enough distance away from a target region ( 50 ) so that EUV radiation ( 56 ) generated at the target region ( 50 ) by a laser beam ( 54 ) impinging a target stream ( 46 ) emitted from the nozzle ( 42 ) is not significantly absorbed by target vapor proximate the nozzle ( 42 ). Also, the EUV radiation ( 56 ) does not significantly erode the nozzle ( 42 ) and contaminate source optics ( 34 ). In one embodiment, the nozzle ( 42 ) is more than 10 cm away from the target region ( 50 ).
申请公布号 US6933515(B2) 申请公布日期 2005.08.23
申请号 US20030606447 申请日期 2003.06.26
申请人 UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION 发明人 HARTLOVE JEFFREY S.;MICHAELIAN MARK E.;SHIELDS HENRY;FORNACA STEVEN W.;MCNAUGHT STUART J.;MARTOS FERNANDO;MOYER RICHARD H.
分类号 G21K5/08;H01L21/027;H05G2/00;H05H1/24;(IPC1-7):H01J35/00 主分类号 G21K5/08
代理机构 代理人
主权项
地址