发明名称 |
Fabrication method of a semiconductor laser device |
摘要 |
In a method for fabricating a semiconductor laser device, a plurality of grooves are formed in a surface of one conductive type of an InP layer. The InP layer is thermally treated in an atmosphere including at least a gas containing phosphorus and a gas containing arsenic in a mixed state, thereby forming a plurality of active regions made of InAsP in the plurality of grooves. An other conductive type of semiconductor layer is formed after the active regions are formed.
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申请公布号 |
US6933159(B2) |
申请公布日期 |
2005.08.23 |
申请号 |
US20030628550 |
申请日期 |
2003.07.28 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KITO MASAHIRO;ISHINO MASATO;TODA TOMOAKI;NAKANO YOSHIAKI |
分类号 |
H01S5/00;H01S5/12;H01S5/20;H01S5/34;H01S5/343;(IPC1-7):H01L21/66 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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