| 摘要 |
A device isolation structure and method for a semiconductor device according to the present invention includes forming first and second trenches by etching predetermined regions of a semiconductor substrate, forming a buried insulating film in the trenches, filling in the trenches by depositing single crystal silicon film on the buried insulating film by a silicon epitaxy method, and forming a field insulating film on portions of the semiconductor substrate between the first and second trenches. The field oxide film isolating the single crystal silicon layers fills the adjacent trenches, thus isolating semiconductor devices, such as a high voltage device and a low voltage device, to be fabricated in the single crystal silicon layers.
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