发明名称 |
Semiconductor wafer manufacturing methods employing cleaning delay period |
摘要 |
A method of manufacturing a semiconductor wafer including cleaning a surface of the wafer during a first time period and forming a layer over the surface during a second time period. The first time period includes a cleaning delay period prior to a cleaning portion of the first time period, the cleaning delay period configured such that an end time of the first time period substantially coincides with a start time of the second time period.
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申请公布号 |
US6933157(B2) |
申请公布日期 |
2005.08.23 |
申请号 |
US20030712460 |
申请日期 |
2003.11.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN CHIA-LIN;LEE TZE-LIANG;CHEN SHIH-CHANG |
分类号 |
H01L21/00;H01L21/02;H01L21/44;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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