| 摘要 |
A nonvolatile ferroelectric memory device is disclosed, which includes a cell block which includes a series-connection of a plurality of unit cells each having a ferroelectric capacitor with its both ends connected to the source and drain of a cell transistor, a pair of bit lines to which both ends of the cell block are connected through block select gates respectively, word lines each connected to the gate of a corresponding cell transistor of the cell block, a plate line to which a node of a unit cell at a specified position within the cell block is connected via a plate-line select gate, and a sense amplifier having differential input terminals which are connected to the paired bit lines respectively.
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