发明名称 |
Film bulk acoustic resonator (FBAR) device and method for producing the same |
摘要 |
An FBAR device includes a substrate structure provided with an upper surface, a seed layer formed on the upper surface of the substrate structure and made of one selected from gold (Au) and titanium (Ti), and one or more acoustic resonant portions. Each of the acoustic resonant portions includes a lower electrode film formed on the seed layer and made of molybdenum (Mo), a piezoelectric layer formed on the lower electrode film and made of aluminum nitride (AlN), and an upper electrode film formed on the piezoelectric layer.
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申请公布号 |
US6933809(B2) |
申请公布日期 |
2005.08.23 |
申请号 |
US20030601658 |
申请日期 |
2003.06.24 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KYOUNG JE HONG;SUNWOO KOOK HYUN |
分类号 |
H01L41/09;H01L41/08;H01L41/18;H01L41/22;H03H3/02;H03H9/17;H03H9/56;(IPC1-7):H03H9/00 |
主分类号 |
H01L41/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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