| 摘要 |
An integrated oxide removal and processing system ( 10 ) includes a process module ( 30 ) that may intentionally add at least one film layer to a single semiconductor wafer ( 32 ). The integrated oxide removal and processing system ( 10 ) also includes a transfer chamber module ( 20 ) used to align the semiconductor wafer ( 32 ) for the process module ( 30 ). The transfer chamber module ( 20 ) may expose the semiconductor wafer ( 32 ) to a vaporous solution that is inert with respect to the semiconductor wafer ( 32 ) and operable to remove an oxide layer ( 110 ) therefrom. More specifically, the semiconductor wafer ( 32 ) includes silicon. In a further embodiment, the vaporous solution includes HF. In yet a further embodiment, the vaporous solution includes 0.049% to 49% HF.
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