发明名称 |
Method for forming a minute pattern and method for manufacturing a semiconductor device using the same |
摘要 |
A method for forming a minute pattern includes forming a mask layer on an object being patterned. The mask layer is patterned to form a first mask pattern having a first width larger than a predetermined width. The first mask pattern is thermally treated to form a second mask pattern having a second width smaller than the first width. A polymer layer is formed on the second mask pattern. The polymer layer reacts with the second mask pattern to form a hardened layer on a boundary surface between the polymer layer and the second mask pattern, thereby forming a third mask pattern having a third width substantially identical to the predetermined width. The limits of the present photolithography equipment are overcome. Also, a semiconductor device having a CD of below about 100 nm is manufactured.
|
申请公布号 |
US6933247(B2) |
申请公布日期 |
2005.08.23 |
申请号 |
US20040776122 |
申请日期 |
2004.02.11 |
申请人 |
SAMSUNG ELECTRONICS, CO., LTD. |
发明人 |
BYUN SUNG-HWAN;LEE DAE-YOUP;KIM BONG-CHEOL |
分类号 |
H01L21/027;G03F7/20;G03F7/40;H01L21/31;(IPC1-7):H01L21/31;H01L31/469 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|