发明名称 |
Polymers, resist compositions and patterning process |
摘要 |
A copolymer of an acrylate monomer containing fluorine at alpha-position with a fluorinated hydroxystyrene derivative is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, resolution, transparency, substrate adhesion and plasma etching resistance, and is suited for lithographic microprocessing.
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申请公布号 |
US6933095(B2) |
申请公布日期 |
2005.08.23 |
申请号 |
US20020178475 |
申请日期 |
2002.06.25 |
申请人 |
CENTRAL GLASS CO., LTD. |
发明人 |
HARADA YUJI;HATAKEYAMA JUN;KAWAI YOSHIO;SASAGO MASARU;ENDO MASAYUKI;KISHIMURA SHINJI;OOTANI MICHITAKA;MIYAZAWA SATORU;TSUTSUMI KENTARO;MAEDA KAZUHIKO |
分类号 |
G03F7/032;C08F212/14;C08F220/04;C08F220/22;G03F7/004;G03F7/039;G03F7/38;H01L21/027;(IPC1-7):G03F7/039 |
主分类号 |
G03F7/032 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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