发明名称 |
Thin-film deposition method |
摘要 |
In a thin-film deposition method, a substrate is placed in a heat chamber having a pressure equal to or higher than an atmospheric pressure, and the substrate is heated in the heat chamber by supplying gas having a temperature higher than a room temperature by forced convection. The heated substrate is transferred from the heat chamber into a deposition chamber which is a vacuum chamber connected to the heat chamber directly or indirectly with a valve interposed therebetween. Then, a thin-film deposition is carried out on the substrate in the deposition chamber at a deposition temperature higher than the room temperature.
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申请公布号 |
US6933009(B2) |
申请公布日期 |
2005.08.23 |
申请号 |
US20030428849 |
申请日期 |
2003.05.05 |
申请人 |
ISHIKAWAJIMA-HARIMA HEAVY INDUSTIES CO., LTD. |
发明人 |
UEDA MASASHI;TAKAGI TOMOKO |
分类号 |
H01L21/205;B01J3/00;B01J3/02;B01J19/00;C23C16/458;C23C16/46;C23C16/509;C23C16/54;H01L31/04;(IPC1-7):C23C16/00 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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