发明名称 |
Method of forming a thin film with a low hydrogen content on a semiconductor device |
摘要 |
A method of forming a thin film with a low hydrogen contents is provided by positioning a substrate inside a processing chamber, and supplying reacting materials into the chamber, chemisorbing a portion of the reacting materials onto the substrate. Then, a nitrogen (N<SUB>2</SUB>) remote plasma treatment is performed to reduce the hydrogen content of thin film layer formed by chemisorption of the reacting materials on the substrate. Accordingly, a thin film is formed having a low hydrogen content, since the hydrogen bonds in the thin film layer formed by chemisorption of the reacting materials are removed.
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申请公布号 |
US6933245(B2) |
申请公布日期 |
2005.08.23 |
申请号 |
US20030403572 |
申请日期 |
2003.03.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SEUNG-HWAN;YANG JONG-HO |
分类号 |
H01L21/20;C23C16/44;C23C16/455;C23C16/56;H01L21/314;H01L21/318;(IPC1-7):H01L21/469 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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