发明名称 |
Method of manufacturing semiconductor device featuring formation of conductive plugs |
摘要 |
A semiconductor device and method of manufacturing the same are disclosed. A conductive structure, spacers and a dielectric layer are formed on a substrate. Thereafter, a portion of the cap layer, a portion of the spacers and a portion of the dielectric layer of the conductive structure are removed to form a funnel-shaped opening. The shoulder section of the conductive layer exposed by the funnel-shaped opening is removed to form a shoulder recess. A liner layer is formed on the sidewall of the funnel-shaped opening and then a bottom plug is formed inside the funnel-shaped opening. Another dielectric layer is formed over the substrate. A top plug is formed in the dielectric layer such that the top plug and the bottom plug are electrically connected. Finally, a wire line is formed over the substrate. |
申请公布号 |
US6933229(B2) |
申请公布日期 |
2005.08.23 |
申请号 |
US20030605306 |
申请日期 |
2003.09.22 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
KUAN SHIH-FAN;WU KUO-CHIEN |
分类号 |
H01L21/60;H01L21/768;H01L21/8239;H01L23/485;H01L27/105;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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