发明名称 Semiconductor device with improved heatsink structure
摘要 A semiconductor device for an improved heatsink structure. The semiconductor device is composed of a first substrate, a first heatsink plate connected to the first substrate, a second substrate having a rear surfaces connected to the first heatsink plate, a semiconductor chip having a main surface bonded to a main surface of the second substrate, and a second heatsink plate connected to a rear surface of the semiconductor chip.
申请公布号 US6933612(B2) 申请公布日期 2005.08.23
申请号 US20030687999 申请日期 2003.10.17
申请人 NEC ELECTRONICS CORPORATION 发明人 KIMURA NAOTO
分类号 H01L23/12;H01L21/56;H01L23/31;H01L23/34;H01L23/36;H01L23/433;H01L23/498;(IPC1-7):H01L23/495 主分类号 H01L23/12
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