Method of manufacturing flash memories of semiconductor devices

摘要

Disclosed is a method of manufacturing a semiconductor device. A monoatomic dopant having a high atomic weight is implanted to form an ion implantation layer, instead of using a dopant of a small atomic weight such as B or a molecular ion such as a BF₂ in order to control the threshold voltage of the semiconductor device. Therefore, in an annealing process for mitigating damage caused by ion implantation, it is possible to limit TED (transient enhanced diffusion) of the dopant and prevent degradation of the film quality due to outgasing.