发明名称 |
Method for forming enhanced areal density split gate field effect transistor device array |
摘要 |
A method for forming a floating gate electrode within a split gate field effect transistor device provides for isotropically processing a blanket isotropically processable material layer having a patterned mask layer formed thereover to form a patterned isotropically processed material layer which encroaches beneath the patterned mask layer. The patterned isotropically processed material layer may then be employed as a mask for forming a floating gate electrode from a blanket floating gate electrode material layer. The method provides for forming adjacent floating gate electrodes with less than minimally photolithographically resolvable separation.
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申请公布号 |
US6933198(B2) |
申请公布日期 |
2005.08.23 |
申请号 |
US20020326501 |
申请日期 |
2002.12.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
CHU WEN-TING;HSIEH CHIA-TA;LIN CHRONG-JUNG |
分类号 |
H01L21/28;H01L21/8247;H01L27/115;H01L29/423;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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