发明名称 |
Method of manufacturing semiconductor device using STI technique |
摘要 |
A method of manufacturing a semiconductor device including forming a laminate structure which includes a gate insulation film on a semiconductor substrate and a gate electrode material film on the gate insulation film, processing the gate electrode material film to obtain a gate electrode having a reverse tapered cross section, and forming a device isolation insulation film in direct contact with a side surface of the gate electrode.
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申请公布号 |
US6933194(B2) |
申请公布日期 |
2005.08.23 |
申请号 |
US20030670249 |
申请日期 |
2003.09.26 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NARITA KAZUHITO;SAKAGAMI EIJI;TSUNODA HIROAKI;SONODA MASAHISA;KOBAYASHI HIDEYUKI |
分类号 |
H01L21/28;H01L21/76;H01L21/762;H01L21/8234;H01L21/8247;H01L27/115;H01L29/423;H01L29/43;H01L29/49;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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