发明名称 |
Method for manufacturing semiconductor device |
摘要 |
Provided is a manufacturing method of a semiconductor device, which comprises exposing a surface of a semiconductor substrate on which a heterocrystalline layer is to be grown inside of a second emitter opening portion of a hetero-junction bipolar transistor, removing water by preheat treatment in a reducing gas atmosphere, subjecting the substrate to second heat treatment in a reducing gas atmosphere at a temperature which is higher than the preheating treatment but does not adversely affect the impurity concentration distribution of another element on the semiconductor substrate, thereby removing an oxide film formed on the surface on which the heterocrystalline layer is to be grown, and then selectively causing epitaxial growth of the heterocrystalline layer on the thus cleaned surface in the second emitter opening portion. According to the present invention, reliability of a semiconductor device having a hetero-junction bipolar transistor can be improved.
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申请公布号 |
US6933201(B2) |
申请公布日期 |
2005.08.23 |
申请号 |
US20030347221 |
申请日期 |
2003.01.21 |
申请人 |
HITACHI ULSI SYTEMS CO., LTD. |
发明人 |
TOMINARI TATSUYA;HASHIMOTO TAKASHI;JINBO TOMOKO;UDO TSUTOMU |
分类号 |
H01L21/331;H01L21/8222;H01L21/8248;H01L21/8249;H01L27/06;H01L29/732;H01L29/737;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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