发明名称 Ion implanting apparatus
摘要 An ion implanting apparatus of has a wafer cassette capable of loading a plurality of wafers, an implanting chamber including an implanting base, a cassette-transferring module for moving the wafer cassette, and a wafer-transferring module for moving the wafer from the wafer cassette to the implanting base. The wafer cassette has a plurality of irradiation trays for loading the wafer, while the implanting base has a guiding slot for guiding the irradiation tray. The cassette-transferring module includes a rack positioned on the wafer cassette, a gear for moving the wafer cassette by driving the rack through rotating, and a first stepping motor for driving the gear. The wafer-transferring module has a push plate for moving the irradiation tray from the wafer cassette to the implanting base, and a second stepping motor for driving the push plate.
申请公布号 US6933511(B2) 申请公布日期 2005.08.23
申请号 US20030715982 申请日期 2003.11.18
申请人 ATOMIC ENERGY COUNCIL INSTITUTE OF NUCLEAR ENERGY RESEARCH 发明人 YANG TSUN-NENG;GUNNG TAI-CHENG;MA WEI-YANG;YANG YU-TANG;TSAI MING-RUESY;LAN KAO-CHI
分类号 G21K5/10;H01J37/20;H01J37/317;H01L21/00;H01L21/677;(IPC1-7):G21K5/10 主分类号 G21K5/10
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