Electroluminescent device e.g. laser diode for e.g. DVD disc, has layer formed between active area and p type confinement layer, where former layer is formed of specific alloy of composition

摘要

The device has quantum wells (1, 2) in an active area, and quantum barriers (3, 4). A layer is formed between the area and a p type confinement layer (9). The former layer is formed of an alloy of composition (AlzGa1-z)uIn1-uP, where z is less than 0.5 and u is related to z by a relation 1-u is equal to 0.3+0.286xz. The relation defines the intersection of fields where the alloy changes direct forbidden band to indirect band.