| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method which enables manufacture with higher productivity of a barrier film having extremely high gas barrier properties and high transparency, being excellent in pliability and weather resistance and having the heat resistance and chemical resistance required for various post-processing suitabilities, and plasma CVD equipment used therefor. SOLUTION: Using a first organic silicon compound having a bond of oxygen and silicon of an alkoxy group in a molecule and a second organic silicon compound having a carbon-silicon bond in a molecule as raw materials, an oxidized silicon carbide film (SiOC film) or an oxidized nitrided silicon carbide film (SiONC film) is formed on a base film by a plasma CVD method. An electrode making power on the occasion of the film formation is set to be higher than an electrode making allowable power on the occasion when the second organic silicon compound alone is used as the raw material. COPYRIGHT: (C)2005,JPO&NCIPI
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