MULTI-GATE TRANSISTOR FORMED WITH ACTIVE PATTERNS OF UNIFORM CRITICAL DIMENSION AND FABRICATING METHOD THEREFOR

摘要

For fabricating a multi-gate transistor, at least one active pattern having uniform critical dimension is formed. Epitaxy structures are grown from exposed portions of the active pattern. A channel region of the transistor is formed from at least two surfaces of the active pattern. Source and drain are formed using the epitaxy structures.