| 摘要 |
<p>The arrangement has an anode region of a first conductive type and a cathode region of a second, different, conductive type. These regions are formed in the semiconductor material and are arranged to extend in a first direction. The anode region has an arrangement in a second, lateral direction with alternating anode regions of the first and second type. The anode region also ha a special anode region of the second conductive type. This has a larger, lateral extension than the other anode region of the same type. This special region is arranged such that, in an operating mode with electrostatic discharge, it serves as an emitter region of a parasitic bipolar transistor in the integrated diode arrangement. Independent claims also cover a semiconductor component having such a diode.</p> |
