| 摘要 |
<P>PROBLEM TO BE SOLVED: To flexibly cope with access to a memory wherein a different erasure block size is assumed. <P>SOLUTION: This memory card 1 has a controller 4 and a NAND type flash memory 3. The controller 4 includes a ROM 9 storing a program for managing association between a first address in a semiconductor memory having a first erasure block size and a second address in a semiconductor memory having a second erasure block size larger than the first erasure block size; and a CPU 8 executing the program stored in the ROM 9. The NAND type flash memory 3 is the memory having the second erasure block size. The controller 4 executes the access to the NAND type flash memory 3 by use of the second address. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
