| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an abrasive composition, capable of polishing a metal film at high speed, even under low polishing pressure conditions and capable of suppressing occurrence of defects in polished surfaces, e.g. scratches or dishing, in a process for planarizing the metal film on a semiconductor substrate, and to provide a method for planarizing the metal film on the semiconductor substrate which uses it, and a process for producing a semiconductor substrate. <P>SOLUTION: The metal abrasive compound contains polyoxo acid, an anioic surfactant, abrasive grains and water. The process of planarizing a metal film on a semiconductor substrate and a process of producing a semiconductor substrate employ this metal abrasive compound. Consequently, a metal film, e.g. a copper film, can be polished at a high speed, even under a low polishing pressure, while suppressing etching and dishing which has been difficult in conventional technologies. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
