| 摘要 |
Disclosed is a method for forming a multilayer metal thin film capable of improving electromigration reliability. In accordance with an aspect of the present invention, there is provided a method for forming a multilayer metal thin film in a semiconductor device, comprising the steps of: forming a Ti film having an <002> crystal orientation by using an ionized physical vapor deposition method; forming a TiN film on the Ti film in order to form a multilayer stack, wherein the TiN film has an <111> crystal orientation; and forming an aluminum film on the multilayer stack in an <111> crystal orientation. Accordingly, the aluminum metal interconnection according to the present invention increases the <002> orientation of the Ti film and improves the <111> orientation of the aluminum to control the electromigration resistance, by using the IPVD method in forming the Ti film as an underlayer of the aluminum film.
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