发明名称 |
Skewed sense AMP for variable resistance memory sensing |
摘要 |
A variable resistance memory sense amplifier has a built-in offset to assist in switching the sense amplifier when a resistive memory cell is in a low resistance state. The built-in offset can be achieved by varying size, threshold voltage, associated capacity or associated resistance of the transistors within the sense amplifier.
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申请公布号 |
US2005180208(A1) |
申请公布日期 |
2005.08.18 |
申请号 |
US20050089132 |
申请日期 |
2005.03.24 |
申请人 |
HUSH GLEN;BAKER R. J.;MOORE JOHN |
发明人 |
HUSH GLEN;BAKER R. J.;MOORE JOHN |
分类号 |
G11C7/06;G11C11/4091;(IPC1-7):G11C16/06 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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