| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polymer compound excellent in resolution in exposure to an ArF excimer laser and dry etching resist, capable of suppressing line edge roughness small and useful for a base resin for use in a radiation sensitive resist. <P>SOLUTION: The polymer compound comprises repeating units represented by formulae (1a) and (1b), wherein R<SP>1</SP>and R<SP>2</SP>are each H or F, R<SP>3</SP>is F or a fluorinated alkyl group, R<SP>4</SP>is H or an adhesive proup, R<SP>5</SP>is CH<SB>2</SB>or O, R<SP>6</SP>-R<SP>9</SP>are each H, F, CN, an alkyl group, a fluorinated alkyl group,-OR<SP>11</SP>, -R<SP>10</SP>-CO<SB>2</SB>R<SP>11</SP>or -R<SP>10</SP>-C(R<SP>12</SP>)(R<SP>13</SP>)-OR<SP>11</SP>, R<SP>10</SP>is an alkylene group or a fluorinated alkylene group, R<SP>11</SP>is H or an acid unstable group, R<SP>12</SP>and R<SP>13</SP>are each H, an alkyl group or a fluorinated alkyl group, at least one of R<SP>6</SP>-R<SP>9</SP>contains -R<SP>10</SP>-CO<SB>2</SB>R<SP>11</SP>or -R<SP>10</SP>-C(R<SP>12</SP>)(R<SP>13</SP>)-OR<SP>11</SP>, at least 5 moles% of R<SP>11</SP>are an acid unstable group, 0<a1<1, 0<a2<1, 0<a1+a2≤1, and (b) is 0 or 1. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
