| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device including a CMP process for efficient polishing on a single polishing station with erosion and dishing further suppressed, by no use of special CMP (chemical and mechanical polishing) slurry. <P>SOLUTION: A semiconductor wafer comprises on a semiconductor substrate a base layer containing an insulating film formed with at least one recess and a metal material layer which fills the recess and is formed across the top surface of the base layer. The semiconductor wafer is subjected to a polishing process while a metal ion is supplied to basic CMP slurry, so that at least a part of the metal material layer is polished away. After that, the basic CPM slurry is added with an organic acid for chelating the metal ion, and polishing is performed using the organic-acid-added CMP slurry until the surface of the insulating film is exposed. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
