TUNNEL JUNCTION AND MEMORY USING SAME

摘要

PROBLEM TO BE SOLVED: To provide a tunnel junction wherein an increase of storage capacity is realized and high-speed operation of a circuit is enabled, and provide a memory using the tunnel junction object. SOLUTION: The tunnel junction is formed by using a first magnetic layer equipped with a hollow portion, a second magnetic layer having magnetic property different from the first magnetic layer, and a tunnel insulating layer interposed between the first and the second magnetic layers. COPYRIGHT: (C)2005,JPO&NCIPI